Large Active Area Photodiodes

Electro-Optical Characteristics

FCI-InGaAs-XXX-X series with active area sizes of 1mm, 1.5mm and 3mm, are part of OSI Optoelectronics' large active area IR sensitive detectors which exhibit excellent responsivity from 1100nm to 1620nm, allowing high sensitivity to weak signals.

These large active area devices are ideal for use in infrared instrumentation and monitoring applications. The photodiode chip are isolated in TO-46 or TO-5 packages with a broadband double sided AR coated flat window. FCI-InGaAs-1500-X and FCI-InGaAs-3000-X come with different shunt resistance values of 5, 10, 20, 30 and 40 MΩ.

InGaAs Large Active Area

Product Applications

  • Optical Instrumentation
  • Power Measurement
  • IR Sensing
  • Medical Devices

Product Features

  • High Responsivity
  • Large Active Area Diameter
  • Low Noise
  • Spectral Range 900nm to 1700nm

Electro-Optical Characteristics

Model Number Active Area Diameter Responsivity 1310nm Responsivity 1550nm Shunt Resistance Capacitance Package Click Image to Zoom
FCI-InGaAS-1000-X 1 mm 0.9 A/W 0.95 A/W 30 MΩ
Vr = 10m V
80 pF
Vr = 0V
TO-18 No image found for (FCI-InGaAS-1000-X)
FCI-InGaAs-1500-X 1.5 mm 0.9 A/W 0.95 A/W --- 200 pF
Vr = 0V
TO-18 No image found for (FCI-InGaAs-1500-X)
FCI-InGaAs-3000-X 3 mm 0.9 A/W 0.95 A/W --- 750 pF
Vr = 0V
TO-5 Click to View Larger Image of (FCI-InGaAs-3000-X)

Electro-Optical Characteristics

Model Number Storage Temp Operating Temp Soldering Temp Package Click Image to Zoom
FCI-InGaAS-1000-X -55 to 125 °C -40 to 75 °C 260 °C TO-18 No image found for (FCI-InGaAS-1000-X)
FCI-InGaAs-1500-X -55 to 125 °C -40 to 75 °C 260 °C TO-18 No image found for (FCI-InGaAs-1500-X)
FCI-InGaAs-3000-X -55 to 125 °C -40 to 75 °C 260 °C TO-5 Click to View Larger Image of (FCI-InGaAs-3000-X)