Avalanche Photodiodes (APD)

Ultra High Gain Silicon Photodetectors

Silicon Avalanche Photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is the optimized series of high Responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available with flat windows or ball lenses for optical fiber applications.

Silicon Avalanche Photodiodes

Product Applications

  • High Speed Optical Communications
  • Laser Range Finder
  • Bar Code Readers
  • Optical Remote Control
  • Medical Equipment
  • High Speed Photometry

Product Features

  • High Speed Responsivity / QE
  • High Bandwidth / Fast Response
  • Low Noise
  • Low Bias Voltage
  • Hermetically Sealed TO-Packages

Silicon Avalanche Photodiodes (APD)

Model Number Active Area Active Area Dimensions Peak Wavelength Responsivity Dark Current (Max) Terminal Capacitance Breakdown Voltage Typ. (100µA) Temperature Coefficient of Breakdown Voltage Gain (800 nm) Package Click Image to Zoom
APD02-8-150-T52 .03 mm² 0.2 Φ mm 800 nm 50 A/W 1 nA 1.5 pF 150 V .45 V/℃ 100 65 / TO-52 or 66 / TO-52L No image found for (APD02-8-150-T52)
APD05-8-150-T52 .19 mm² .5 Φ mm 800 nm 50 A/W 1 nA 3 pF 150 V .45 V/℃ 100 65 / TO-52 or 66 / TO-52L No image found for (APD05-8-150-T52)
APD10-8-150-T52 .78 mm² 1 Φ mm 800 nm 50 A/W 2 nA 6 pF 150 V .45 V/℃ 100 65 / TO-52 or 66 / TO-52L No image found for (APD10-8-150-T52)
APD15-8-150-TO5 1.77 mm² 1.5 Φ mm 800 nm 50 A/W 5 nA 10 pF 150 V .45 V/℃ 100 67 / TO-5 No image found for (APD15-8-150-TO5)
APD30-8-150-TO5 7 mm² 3 Φ mm 800 nm 30 A/W 10 nA 40 pF 150 V .45 V/℃ 60 67 / TO-5 No image found for (APD30-8-150-TO5)
APD50-8-150-TO8 19.6 mm² 5 Φ mm 800 nm 20 A/W 30 nA 105 pF 150 V .45 V/℃ 40 3 / TO-8 No image found for (APD50-8-150-TO8)
* 'L' Suffix refers to devices with ball lens cap