Photovoltaic Devices

Low Noise Planar Diffused Silicon Photodiodes

The Photovoltaic Detector series is utilized for applications requiring high sensitivity and moderate response speeds, with an additional sensitivity in the visible-blue region for the blue enhanced series. The spectral response ranges from 350 to 1100 nm, making the regular photovoltaic devices ideal for visible and near IR applications. For additional sensitivity in the 350 to 550 nm region, the blue enhanced devices are more suitable.

These detectors have high shunt resistance and low noise, and exhibit long term stability. Unbiased operation of these detectors offers stability under wide temperature variations in DC or low speed applications. For high light levels ( greater than 10mW/cm2), the Photoconductive Series detectors should be considered for better linearity.

These detectors are not designed to be reverse biased! Very slight improvement in response time may be obtained with a slight bias. Applying a reverse bias of more than a few volts (>3V) will permanently damage the detectors. If faster response times are required, The Photoconductive Series should be considered. 

Please refer to the Photovoltaic Mode (PV) paragraph in the application note "Photodiode Characteristics and Applications" located under Application Notes for detailed information on electronics set up.

Silicon Photovoltaic

Product Applications

  • Colorimeters
  • Photometers
  • Spectroscopy Equipment
  • Fluorescence

Product Features

  • Ultra Low Noise
  • High Shunt Resistance
  • Blue Enhanced
  • Wide Dynamic Range

Photovoltaic Series

Model Number Active Area Active Area Dimensions Peak Wavelength Responsivity Shunt Resistance Capacitance Rise TIme Package Click Image to Zoom
CD-1705 0.88 mm² .93 mm² 850 nm 0.60 A/W 10 GO 70 pF 2000 ns 71/Plastic Click to View Larger Image of (CD-1705)
PIN-2DPI ‡ 1.1 mm² 0.81 x 1.37 mm 970 nm 0.60 A/W 10 GO 150 pF 30 ns 4 /TO-18 Click to View Larger Image of (PIN-2DPI ‡)
PIN-125DPL 1.6 mm² 1.27 mm² 970 nm 0.60 A/W 10 GO 160 pF 30 ns 8 / TO-18 Click to View Larger Image of (PIN-125DPL)
PIN-3CDP 3.2 mm² 1.27 x 2.54 mm 970 nm 0.60 A/W 5.0 GO 320 pF 50 ns 7 / TO-18 Click to View Larger Image of (PIN-3CDP)
PIN-3CDPI 3.2 mm² 1.27 x 2.54 mm 970 nm 0.60 A/W 5.0 GO 320 pF 50 ns 4 / TO-18 Click to View Larger Image of (PIN-3CDPI)
PIN-5DP 5.1 mm² 2.54 F mm 970 nm 0.60 A/W 4 GO 500 pF 60 ns 5 / TO-5 Click to View Larger Image of (PIN-5DP)
PIN-5DPI 5.1 mm² 2.54 F mm 970 nm 0.60 A/W 4 GO 500 pF 60 ns 5 / TO-5 Click to View Larger Image of (PIN-5DPI)
PIN-13DP 13 mm² 3.6 mm² 970 nm 0.60 A/W 3.5 GO 1200 pF 150 ns 5 / TO-5 Click to View Larger Image of (PIN-13DP)
PIN-13DPI 13 mm² 3.6 mm² 970 nm 0.60 A/W 3.5 GΩ 1200 pF 150 ns 5 / TO-5 Click to View Larger Image of (PIN-13DPI)
PIN-6DP 16.4 mm² 4.57 F mm 970 nm 0.60 A/W 2 GO 2000 pF 220 ns 6 / TO-8 Click to View Larger Image of (PIN-6DP)
PIN-6DPI 16.4 mm² 4.57 F mm 970 nm 0.60 A/W 2 GO 2000 pF 220 ns 3 / TO-8 Click to View Larger Image of (PIN-6DPI)
PIN-44DP 44 mm² 6.6 mm² 970 nm 0.60 A/W 1.0 GO 4300 pF 475 ns 6 / TO-8 Click to View Larger Image of (PIN-44DP)
PIN-44DPI 44 mm² 6.6 mm² 970 nm 0.60 A/W 1.0 GO 4300 pF 475 ns 3 / TO-8 Click to View Larger Image of (PIN-44DPI)
PIN-10DP 100 mm² 11.28 F mm 970 nm 0.60 A/W 0.20 GO 9800 pF 1000 ns 11 / BNC Click to View Larger Image of (PIN-10DP)
PIN-10DPI 100 mm² 11.28 F mm 970 nm 0.60 A/W 0.20 GO 9800 pF 1000 ns 10 / Lo-Prof Click to View Larger Image of (PIN-10DPI)
PIN-25DP 613 mm² 27.9 F mm 970 nm 0.60 A/W 0.1 GO 60000 pF 6600 ns 12 / BNC Click to View Larger Image of (PIN-25DP)

Plastic Package

Model Number Active Area Active Area Dimensions Peak Wavelength Responsivity Shunt Resistance Capacitance Rise Time Package Click Image to Zoom
PIN-220DP 200 mm² 10 x 20 mm 970 nm 0.60 A/W 0.25 GΩ 20000 pF 2200 ns 27 / Plastic Click to View Larger Image of (PIN-220DP)
‡ The 'I' suffix on the model number is indicative of the photodiode chip being isolated from the the package by an additional pin connected to the case.