Multi Element Photodiode Array

Photoconductive Arrays

Multichannel array photodetectors consist of a number of single element photodiodes laid adjacent to each other forming a one-dimensional sensing area common cathode substrate. They can perform simultaneous measurements of a moving beam or beams of many wavelengths. They feature low electrical cross talk and super high uniformity between adjacent elements allowing very high precision measurements.

Arrays offer a low cost alternative when a large number of detectors are required. The detectors are optimized for either UV, visible or near IR range. Then can be either operated in photoconductive mode (reverse biased) to decrease the response time, or in photovoltaic mode (unbiased) for low drift applications.

A2V-16 can be coupled to any scintillator crystal for measuring high-energy photons in the X-ray and g-ray region of the Eletromagnetic spectrum. In addition, they have been mechanically designed, so that several of them can be mounted end to end to each other in applications where more than 16 elements are needed. Figure 11 in the "Photodiode Characteristics" section of this catalog provides a detailed circuit example for the arrays

Silicon Multi Element Array

Product Applications

  • Level Meters
  • Optical Spectroscopy
  • Position Sensors
  • Computed Tomography Scanners
  • Medical Equipment
  • High Speed Photometry

Product Features

  • Common Substrate Array
  • Ultra Low Cross Talk
  • UV Enhanced (A5V-35UV)
  • Low Dark Current
  • Low Capacitance
  • Solderable

Photoconductive Arrays

Model Number Number of Elements Active Area per Element Element Size Pitch Responsivity Shunt Resistance Dark Current Capacitance Open Circuit Voltage Package Click Image to Zoom
A5C-35 35 3.9 mm² 4.39 x 0.89 mm 0.99 mm 0.65 A/W --- 0.05 nA 12 pF (-10V) --- 54 / 40 PIN DIP Click to View Larger Image of (A5C-35)
A5C-38 38 3.9 mm² 4.39 x 0.89 mm 0.99 mm 0.65 A/W --- 0.05 nA 12 pF (-10V) --- 54 / 40 PIN DIP Click to View Larger Image of (A5C-38)

Photovoltaic Arrays

Model Number Number of Elements Active Area per Element Element Size Pitch Responsivity Shunt Resistance Capacitance Package Click Image to Zoom
A2V-16 16 1.92 mm² 1.57 x 1.22 mm 1.59 mm 0.60 A/W --- 170 pF (0V) 53 / PCB Click to View Larger Image of (A2V-16)
A5V-35 35 3.9 mm² 4.39 x 0.89 mm 0.99 mm 0.60 A/W --- 340 pF (0V) 54 / 40 PIN DIP Click to View Larger Image of (A5V-35)
A5V-38 38 3.9 mm² 4.39 x 0.89 mm 0.99 mm 0.60 A/W --- 340 pF (0V) 54 / 40 PIN DIP Click to View Larger Image of (A5V-38)
A2V-76 76 1.8 mm² 6.45 x 0.28 mm 0.31 mm 0.50 A/W --- 160 pF (0V) 52 / Ceramic Click to View Larger Image of (A2V-76)

UV Enhanced Array

Model Number Number of Elements Active Area per Element Element Size Pitch Responsivity Shunt Resistance Capacitance Package Click Image to Zoom
A5V-35UV 35 3.9 mm² 4.39 x 0.89 mm 0.99 mm 0.06 A/W (254nm) 500 MΩ 340 pF 54 / 40 PIN DIP Click to View Larger Image of (A5V-35UV)
The chips are equipped with 2" long bare tinned leads soldered to all anodes and the common cathode.