Inversion Layer Photodiodes

Inversion Layer, Metal & Plastic Packages

OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the UV region of electromagnetic spectrum. 

Inversion layer structure UV enhanced photodiodes exhibit 100% internal quantum efficiency and are well suited for low intensity light measurements. They have high shunt resistance, low noise and high breakdown voltages. The response uniformity across the surface and quantum efficiency improves with 5 to 10 volts applied reverse bias. Photocurrent non-linearity sets in at lower photocurrents for inversion layer devices compared to the diffused ones. Below 700nm, their responsivities vary little with temperature.


Silicon Inversion Layer

Product Applications

  • Pollution Monitoring
  • Medical Instrumentation
  • UV Exposure Meters
  • Spectroscopy
  • Water Purification
  • Fluorescence 

Product Features

  • Inversion series: 100% Internal QE
  • Ultra High Shunt Resistance
  • Excellent UV Response 

Inversion Layer, Metal Package

Model Number Active Area Active Area Dimensions Responsivity @ 254nm Capacitance Shunt Resistance Rise Time Package Click Image to Zoom
UV-001 0.8 mm² 1.0 F mm 0.14 A/W 60 pF 500 MΩ 0.2 µs 5 / TO-5 Click to View Larger Image of (UV-001)
UV-005 5.1 mm² 2.54 Φ mm 0.14 A/W 300 pF 200 MΩ 0.9 µs 5 / TO-5 Click to View Larger Image of (UV-005)
UV-015 15 mm² 3.05 x 3.81 mm 0.14 A/W 800 pF 100 MΩ 2 µs 5 / TO-5 Click to View Larger Image of (UV-015)
UV-20 20 mm² 5.08 Φ mm 0.14 A/W 1000 pF 50 MΩ 2 µs 6 / TO-8 Click to View Larger Image of (UV-20)
UV-35 35 mm² 6.60 x 5.33 mm 0.14 A/W 1600 pF 30 MΩ 3 µs 6 / TO-8 Click to View Larger Image of (UV-35)
UV-50 50 mm² 7.87 F mm 0.14 A/W 2500 pF 20 MΩ 3.5 µs 11 / BNC Click to View Larger Image of (UV-50)
UV-50L‡ 50 mm² 7.87 F mm 0.14 A/W 2500 pF 20 MΩ 3.5 µs 10 / Lo-Prof Click to View Larger Image of (UV-50L‡)
UV-100 100 mm² 11.28 Φ mm 0.14 A/W 4500 pF 10 MΩ 5.9 µs 11 / BNC Click to View Larger Image of (UV-100)
UV-100L 100 mm² 11.28 Φ mm 0.14 A/W 4500 pF 10 MΩ 5.9 µs 10 / Lo-Prof Click to View Larger Image of (UV-100L)

Inversion Layer, Plastic Package §

Model Number Active Area Active Area Dimensions Responsivity @ 254nm Capacitance Shunt Resistance Rise Time Package Click Image to Zoom
FIL-UV005 5.1 mm² 2.54 Φ mm 0.14 A/W 300 pF 200 MΩ 0.9 µs 14 / Plastic Click to View Larger Image of (FIL-UV005)
UV-35P 35 mm² 6.60 x 5.33 mm 0.14 A/W 1600 pF --- 3 µs 25 / Plastic Click to View Larger Image of (UV-35P)
FIL-UV50 50 mm² 7.87 Φ mm 0.14 A/W 2500 pF 20 MΩ 3.5 µs 15 / Plastic Click to View Larger Image of (FIL-UV50)
‡ The 'I' suffix on the model number is indicative of the photodiode chip being isolated from the the package by an additional pin connected to the case.
§ The photdiode chips in "FIL" series are isolated in a low profile plastic package. They have a large field of view as well as "in line" pins.