Fully Depleted Photodiodes

High Breakdown, Fully Depleted Large Area Silicon Photodiodes

These Large Active Area High Speed Detectors can be fully depleted to achieve the lowest possible junction capacitance for fast response times. They may be operated at a higher reverse voltage, up to the maximum allowable value, for achieving even faster response times in nano seconds. The high reverse bias at this point, increases the effective electric field across the junction, hence increasing the charge collection time in the depleted region. Note that this is achieved without the sacrifice for the high responsivity as well as active area.

These Large Active Area Radiation Detectors can also be fully depleted for applications measuring high energy X-rays, X-rays as well as high energy particles such as electrons, alpha rays and heavy ions. These types of radiation can be measured with two different methods: indirect and direct.

Silicon Fully Depleted

Product Applications

  • Laser Applications
  • Control Systems
  • Electron Detection
  • High Energy Physics
  • Medical Instrumentation

Product Features

  • Large Active Area
  • Fully Depleteable
  • Fast Response
  • Ultra Low Dark Current 
  • Low Capacitance
  • High Breakdown Voltage
  • Scintillator Mountable

Super Low Noise Large Area Silicon Photodiodes

Model Number Active Area Active Area Dimensions Peak Wavelength Responsivity Shunt Resistance Capacitance NEP Package Click Image to Zoom
OSD35-LR-A 34.2 mm² 5.8 x 5.9 mm 830 nm 0.54 A/W at 900nm 3 GΩ 1300 pF 5.6 e-15 W/√Hz 25 / Ceramic Click to View Larger Image of (OSD35-LR-A)
OSD35-LR-D 34.2 mm² 5.8 x 5.9 mm 830 nm 0.54 A/W at 900nm 0.3 GΩ 1300 pF 1.8 e-14 W/√Hz 25 / Ceramic Click to View Larger Image of (OSD35-LR-D)

Large Active Area, High Speed

Model Number Active Area Active Area Dimensions Peak Wavelength Responsivity Depletion Voltage Dark Current Capacitance Rise Time NEP Reverse Voltage Package Click Image to Zoom
PIN-RD07 7.1 mm² 3.00 Φ mm 900 nm 0.55 A/W at 900nm 48 V 0.2 nA 8.0 pF 1.5 ns 1.2 e-14 W/√Hz --- 26/TO-8 No image found for (PIN-RD07)
PIN-RD15 14.9 mm² 4.35 Φ mm 900 nm 0.58 A/W at 900nm 55 V 1.0 nA 14 pF 3.0 ns 2.5 e-14 W/√Hz 140 V 26 / TO-8 No image found for (PIN-RD15)
PIN-RD100 100 mm² 10 Sq mm 950 nm 0.60 A/W at 900nm 75 V 2 nA 50 pF 40 ns 3.2 e-14 W/√Hz --- 25 / Ceramic Click to View Larger Image of (PIN-RD100)
PIN-RD100A 100 mm² 10 Sq mm 950 nm 0.60 A/W at 900nm 35 V 2 nA 40 pF 6 ns 3.4 e-14 W/√Hz --- 25 / Ceramic Click to View Larger Image of (PIN-RD100A)
Optically clear epoxy is used instead of glass window