Soft X-Ray, Far UV Enhanced Photodiodes

Inversion Layer Silicon Photodiodes

OSI Optoelectronics' 1990 R&D 100 award winning X-UV detector series are a unique class of silicon photodiodes designed for additional sensitivity in the X-Ray region of the electromagnetic spectrum without use of any scintillator crystals or screens. Over a wide range of sensitivity from 200 nm to 0.07 nm (6 eV to 17,600 eV), one electron-hole pair is created per 3.63eV of incident energy which corresponds to extremely high stable quantum efficiencies predicted by Eph/3.63eV (see graph below). For measurement of radiation energies above 17.6 keV, refer to the "fully Depleted High Speed and High Energy Radiation Detectors" section.

A reverse bias can be applied to reduce the capacitance and increase speed of response. In the unbiased mode, these detectors can be used for applications requiring low noise and low drift. These detectors are also excellent choices for detecting light wavelengths between 350 to 100 nm.

The detectors can be coupled to a charge sensitive preamplifier or low-noise op-amp as shown in the datasheet.

Silicon Soft X-Ray Far UV Enhanced

Product Applications

  • Electron Detection
  • Medical Instrumentation
  • Dosimetry
  • Radiation Monitoring
  • X-ray Spectroscopy
  • Charged Particle Detection

Product Features

  • Direct Detection
  • No Bias Needed
  • High Quantum Efficiency
  • Low Noise
  • High Vacuum/Cryogenically Compatible
  • 0.070 nm to 1100 nm Wavelength Range

Metal

Model Number Active Area Active Area Dimensions Shunt Resistance Capacitance NEP Package Click Image to Zoom
XUV-005 5 mm² 2.57 Φ mm 2000 MΩ 0.3 nF 2.9 e -15 W/√Hz 22 / TO-5 Click to View Larger Image of (XUV-005)
XUV-020 20 mm² 5.00 Φ mm 500 MΩ 1.2 nF 5.8 e - 15 W/√Hz 23 / TO-8 Click to View Larger Image of (XUV-020)
XUV-035 35 mm² 6.78 x 5.59 mm 300 MΩ 2 nF 7.4 e - 15 W/√Hz 23 / TO-8 Click to View Larger Image of (XUV-035)
XUV-100 100 mm² 11.33 Φ mm 100 MΩ 6 nF 1.3 e - 14 W/√Hz 28 / BNC Click to View Larger Image of (XUV-100)

Ceramic

Model Number Active Area Active Area Dimensions Shunt Resistance Capacitance NEP Package Click Image to Zoom
XUV-50C 50 mm² 8.02 Φ mm 200 MΩ 2 nF 9.1 e - 15 W/√Hz 25 / Ceramic Click to View Larger Image of (XUV-50C)
XUV-100C 100 mm² 10.00 mm² 100 MΩ 6 nF 1.3 e - 14 W/√Hz 25 / Ceramic Click to View Larger Image of (XUV-100C)
All XUV devices are supplied with removable windows.