UV Enhanced 100% QE Photodiodes

OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel photodiode series and planar diffused photodiode series. Both families of photodiodes are especially designed for low noise detection in the UV region of electromagnetic spectrum.

Inversion layer structure UV enhanced photodiodes exhibit 100% internal quantum efficiency and are well suited for low intensity light measurements. They have high shunt resistance, low noise and high breakdown voltages. The response uniformity across the surface and quantum efficiency improves with 5 to 10 volts applied reverse bias. In photovoltaic mode (unbiased), the capacitance is higher than diffused devices but decreases rapidly with an applied reverse bias. Photocurrent non-linearity sets in at lower photocurrents for inversion layer devices compared to the diffused ones. Below 700nm, their responsivities vary little with temperature.

Image Datasheet Model Number Active Area Responsivity @ 254nm Shunt Resistance Capacitance Rise Time Package View
PDF UV-005 5.1 mm² 0.14 A/W 200 MΩ 300 pF 0.9 µs TO-5 View
PDF UV-015 15 mm² 0.14 A/W 100 MΩ 800 pF 2 µs TO-5 View
PDF UV-20 20 mm² 0.14 A/W 50 MΩ 1000 pF 2 µs TO-8 View
PDF UV-35 35 mm² 0.14 A/W 30 MΩ 1600 pF 3 µs TO-8 View
PDF UV-35P 35 mm² 0.14 A/W 30 MΩ 1600 pF 3 µs Plastic View
PDF UV-50 50 mm² 0.14 A/W 20 MΩ 2500 pF 3.5 µs BNC View
PDF UV-100 100 mm² 0.14 A/W 10 MΩ 4500 pF 5.9 µs BNC View
PDF UV-100L 100 mm² 0.14 A/W 10 MΩ 4500 pF 5.9 µs Low Profile View

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