UV Enhanced Near-IR Suppressed Photodiodes

OSI family of planar diffused structure UV enhanced photodiodes show significant advantages over inversion layer devices, such as lower capacitance and higher response time. These devices exhibit linearity of photocurrent up to higher light input power compared to inversion layer devices. They have relatively lower responsivities and quantum efficiencies compared to inversion layer devices There are two types of planar diffused UV enhanced photodiodes available: UVDQ and UVEQ. Both series have almost similar electro-optical characteristics, except in the UVEQ series, where the near IR responses of the devices are suppressed. This is especially desirable if blocking the near IR region of the spectrum is necessary.

Image Datasheet Model Number Active Area Peak Wavelength Responsivity @ 200nm Shunt Resistance Reverse Voltage Rise Time Package Window Glass View
PDF UV-005EQ 5.7 mm² 720 nm 0.12 A/W 20 GΩ 140 V 0.5 µs TO-5 Quartz View
PDF UV-005EQC 5.7 mm² 720 nm 0.12 A/W 20 GΩ 140 V 0.5 µs Ceramic Quartz View
PDF UV-013EQ 13 mm² 720 nm 0.12 A/W 10 GΩ 280 V 1 µs TO-5 Quartz View
PDF UV-035EQ 34 mm² 720 nm 0.12 A/W 5 GΩ 800 V 2 µs TO-8 Quartz View
PDF UV-035EQC 34 mm² 720 nm 0.12 A/W 5 GΩ 800 V 2 µs Ceramic Quartz View
PDF UV-100EQ 100 mm² 720 nm 0.12 A/W 2 GΩ 2500 V 7 µs BNC Quartz View
PDF UV-100EQC 100 mm² 720 nm 0.12 A/W 2 GΩ 2500 V 7 µs Ceramic Quartz View

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