UV Enhanced Planar Diffused Photodiodes
OSI family of planar diffused structure UV enhanced photodiodes show significant advantages over inversion layer devices, such as lower capacitance and higher response time. These devices exhibit linearity of photocurrent up to higher light input power compared to inversion layer devices. They have relatively lower responsivities and quantum efficiencies compared to inversion layer devices There are two types of planar diffused UV enhanced photodiodes available: UVDQ and UVEQ. Both series have almost similar electro-optical characteristics, except in the UVEQ series, where the near IR responses of the devices are suppressed. This is especially desirable if blocking the near IR region of the spectrum is necessary. UVDQ devices peak at 970 nm and may be biased for lower capacitance, faster response and wider dynamic range. Or they may be operated in the photovoltaic (unbiased) mode for applications requiring low drift with temperature variations.