UV Enhanced Planar Diffused Photodiodes

OSI family of planar diffused structure UV enhanced photodiodes show significant advantages over inversion layer devices, such as lower capacitance and higher response time. These devices exhibit linearity of photocurrent up to higher light input power compared to inversion layer devices. They have relatively lower responsivities and quantum efficiencies compared to inversion layer devices There are two types of planar diffused UV enhanced photodiodes available: UVDQ and UVEQ. Both series have almost similar electro-optical characteristics, except in the UVEQ series, where the near IR responses of the devices are suppressed. This is especially desirable if blocking the near IR region of the spectrum is necessary. UVDQ devices peak at 970 nm and may be biased for lower capacitance, faster response and wider dynamic range. Or they may be operated in the photovoltaic (unbiased) mode for applications requiring low drift with temperature variations.

Image Datasheet Model Number Active Area Peak Wavelength Responsivity Shunt Resistance Capacitance Rise Time Window Glass Package View
PDF UV-005DQ 5.7 mm² 980 nm 0.12 A/W 1 GΩ 65 pF 0.2 µs Quartz TO-5 View
PDF UV-005DQC 5.7 mm² 980 nm 0.12 A/W 1 GΩ 65 pF 0.2 µs Quartz Ceramic View
PDF UV-013DQ 13 mm² 980 nm 0.12 A/W 0.8 GΩ 150 pF 0.5 µs Quartz TO-5 View
PDF UV-035DQ 34 mm² 980 nm 0.12 A/W 0.1 GΩ 380 pF 1 µs Quartz TO-8 View
PDF UV-035DQC 34 mm² 980 nm 0.12 A/W 0.4 GΩ 380 pF 1 µs Quartz Ceramic View
PDF UV-100DQ 100 mm² 980 nm 0.12 A/W 0.2 GΩ 1100 pF 3 µs Quartz BNC View
PDF UV-100DQC 100 mm² 980 nm 0.12 A/W 0.2 GΩ 1100 pF 3 µs Quartz Ceramic View

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